Helios G3 UC (FEI)
High resolution SEM with Ga ion column for focused ion beam sample manipulation.
- Landing energy range ~100 eV – 30 keV
- Resolution 0.6 nm (2 kV – 30 kV)
- Gas injection system for Pt deposition
- Oxford AZtec EDX detector
- Several detectors and imaging modes, sensitive for different sample aspects
- STEM possible (< 30 kV)
- Analysis of multilayer cross sections in-situ using Ga⁺ beam preparation
- Site-specific TEM lamella preparation